SIHB24N65ET1-GE3

Manufacturer Part	SIHB24N65ET1-GE3
Manufacturer	Vishay Siliconix
Description	MOSFET N-CH 650V 24A TO263
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	122 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	2740 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	250W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;